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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3462 DESCRIPTION *High Breakdown Voltage: V(BR)CBO= 1100V(Min) *Fast Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 1100 V 800 V 7 V 4.5 A 15 A 2 A 100 W .cn mi e ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 5mA; RBE= IC= 2A; IB1= -IB2= 0.4A; L= 2mH; clamped IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 2A; IB= 0.4A B 2SC3462 MIN 800 800 1100 7 TYP. MAX UNIT V V V V 2.0 1.5 10 10 40 V V A A IC= 2A; IB= 0.4A B VCB= 800V; IE=0 Output Capacitance Current-Gain--Bandwidth Product w w scs .i w VEB= 5V; IC=0 IC= 0.3A; VCE= 5V IC= 1.5A; VCE= 5V .cn mi e 10 8 90 15 IE= 0; VCB= 10V; ftest=1.0MHz pF MHz IC= 0.3A; VCE= 10V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 3A , IB1= 0.6A; IB2= -1.2A RL= 133; VCC=400V 0.5 3.0 0.3 s s s hFE-1 Classifications K 10-20 L 15-30 M 20-40 isc Websitewww.iscsemi.cn 2 |
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